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Towards Polyoxometalate‐Cluster‐Based Nano‐Electronics
Author(s) -
VilàNadal Laia,
Mitchell Scott G.,
Markov Stanislav,
Busche Christoph,
Georgiev Vihar,
Asenov Asen,
Cronin Leroy
Publication year - 2013
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201301631
Subject(s) - polyoxometalate , cluster (spacecraft) , nanotechnology , nano , electronics , molecular electronics , materials science , chemistry , computer science , engineering , molecule , electrical engineering , organic chemistry , catalysis , programming language , composite material
We explore the concept that the incorporation of polyoxometalates (POMs) into complementary metal oxide semiconductor (CMOS) technologies could offer a fundamentally better way to design and engineer new types of data storage devices, due to the enhanced electronic complementarity with SiO 2 , high redox potentials, and multiple redox states accessible to polyoxometalate clusters. To explore this we constructed a custom‐built simulation domain bridge. Connecting DFT, for the quantum mechanical modelling part, and mesoscopic device modelling, confirms the theoretical basis for the proposed advantages of POMs in non‐volatile molecular memories (NVMM) or flash‐RAM.