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Enhanced Performance of Benzothieno[3,2‐ b ]thiophene (BTT)‐Based Bottom‐Contact Thin‐Film Transistors
Author(s) -
Huang PengYi,
Chen LiangHsiang,
Chen YuYuan,
Chang WenJung,
Wang JuinJie,
Lii KwangHwa,
Yan JingYi,
Ho JiaChong,
Lee ChengChung,
Kim Choongik,
Chen MingChou
Publication year - 2013
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201204110
Subject(s) - thin film transistor , thiophene , materials science , transistor , crystal (programming language) , dimer , organic semiconductor , single crystal , diffraction , semiconductor , crystallography , optoelectronics , nanotechnology , layer (electronics) , chemistry , organic chemistry , optics , computer science , electrical engineering , physics , engineering , voltage , programming language
Three new benzothieno[3,2‐ b ]thiophene ( BTT ; 1 ) derivatives, which were end‐functionalized with phenyl ( BTT‐P ; 2 ), benzothiophenyl ( BTT‐BT ; 3 ), and benzothieno[3,2‐ b ]thiophenyl groups ( BBTT ; 4 ; dimer of 1 ), were synthesized and characterized in organic thin‐film transistors (OTFTs). A new and improved synthetic method for BTT s was developed, which enabled the efficient realization of new BTT ‐based semiconductors. The crystal structure of BBTT was determined by single‐crystal X‐ray diffraction. Within this family, BBTT , which had the largest conjugation of the BTT derivatives in this study, exhibited the highest p‐channel characteristic, with a carrier mobility as high as 0.22 cm 2 V −1 s −1 and a current on/off ratio of 1×10 7 , as well as good ambient stability for bottom‐contact/bottom‐gate OTFT devices. The device characteristics were correlated with the film morphologies and microstructures of the corresponding compounds.