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Incorporating Zn 2 SnO 4 Quantum Dots and Aggregates for Enhanced Performance in Dye‐Sensitized ZnO Solar Cells
Author(s) -
Li Yafeng,
Wang Ya,
Chen Caiyun,
Pang Aiying,
Wei Mingdeng
Publication year - 2012
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201201047
Subject(s) - photocurrent , materials science , quantum dot , nanoparticle , dye sensitized solar cell , chemical engineering , zinc , deposition (geology) , adsorption , chemical bath deposition , layer (electronics) , conduction band , nanotechnology , optoelectronics , electrolyte , thin film , chemistry , electrode , electron , metallurgy , organic chemistry , paleontology , physics , quantum mechanics , sediment , biology , engineering
The performance of dye‐sensitized ZnO solar cells was improved by a facile surface‐treatment approach through chemical‐bath deposition. After the surface treatment, the quantum dots of Zn 2 SnO 4 were deposited onto ZnO nanoparticles accompanied by the aggregations of Zn 2 SnO 4 nanoparticles. The ZnO film displayed a better resistance to acidic dye solution on account of the deposited Zn 2 SnO 4 nanoparticles. Meanwhile, the open‐circuit photovoltage was greatly enhanced, which can be ascribed to the increased conduction‐band edge of ZnO and inhibited interfacial charge recombination. Although the deposition of Zn 2 SnO 4 decreased the adsorption amounts of N719 dye, the aggregates of Zn 2 SnO 4 with a size of 350–450 nm acted as the effective light‐scattering layer, thereby resulting in an improved short‐circuit photocurrent. By co‐sensitizing 10 μm‐thick ZnO film with N719 and D131 dyes, a top efficiency of 4.38 % was achieved under the illumination of one sun (AM 1.5, 100 mW cm −2 ).