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Enhancing Anisotropy Barriers of Dysprosium(III) Single‐Ion Magnets
Author(s) -
Chen GongJun,
Guo YunNan,
Tian JinLei,
Tang Jinkui,
Gu Wen,
Liu Xin,
Yan ShiPing,
Cheng Peng,
Liao DaiZheng
Publication year - 2012
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201103816
Subject(s) - dysprosium , anisotropy , magnet , ion , magnetic anisotropy , ligand (biochemistry) , scheme (mathematics) , crystallography , materials science , computer science , physics , chemistry , nuclear physics , optics , mathematics , quantum mechanics , magnetic field , mathematical analysis , magnetization , biochemistry , receptor
Magnetic personality : The incorporation of a bulky auxiliary ligand in β‐diketone‐based dysprosium(III) single‐ion magnets (SIMs) remarkably increases the anisotropic barriers, representing a promising route toward the design of higher‐anisotropic‐barrier SIMs (see scheme).