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Tuning of n‐ and p‐Type Reduced Graphene Oxide Transistors with the Same Molecular Backbone
Author(s) -
Lee Junghyun,
Hwang Eunhee,
Lee Eunkyo,
Seo Sohyeon,
Lee Hyoyoung
Publication year - 2012
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201103554
Subject(s) - graphene , pyrene , oxide , doping , polar effect , electrode , transistor , field effect transistor , materials science , chemistry , combinatorial chemistry , optoelectronics , nanotechnology , physics , medicinal chemistry , organic chemistry , quantum mechanics , voltage
Play the field : A field‐effect transistor using reduced graphene oxides was prepared through the reduction of graphene oxides connected between two electrodes. The use of pyrene with an electron‐withdrawing group and an electron‐donating group showed the p‐ and n‐doping effects, respectively, while the pyrene backbone with no electron‐withdrawing or ‐donating groups showed no doping effect.