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Nonvolatile Rewritable Memory Effects in Graphene Oxide Functionalized by Conjugated Polymer Containing Fluorene and Carbazole Units
Author(s) -
Zhang Bin,
Liu YiLiang,
Chen Yu,
Neoh KoonGee,
Li YongXi,
Zhu ChunXiang,
Tok EngSoon,
Kang EnTang
Publication year - 2011
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201100807
Subject(s) - materials science , graphene , triphenylamine , fluorene , indium tin oxide , carbazole , oxide , non volatile memory , optoelectronics , polymer , conjugated system , photochemistry , nanotechnology , thin film , chemistry , composite material , metallurgy
A new polymer, poly[{9,9‐di(triphenylamine)fluorene}(9,9‐dihexylfluorene)(4‐aminophenylcarbazole)] (PFCz) was synthesized and used in a reaction with graphene oxide (GO) containing surface‐bonded acyl chloride moieties to give a soluble GO‐based polymer material GO–PFCz. A bistable electrical switching effect was observed in an electronic device in which the GO–PFCz film was sandwiched between indium–tin oxide (ITO) and Al electrodes. This device exhibited two accessible conductivity states, that is, a low‐conductivity (OFF) state and a high‐conductivity (ON) state, and can be switched to the ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. The ON state is nonvolatile and can withstand a constant voltage stress of −1 V for 3 h and 10 8 read cycles at −1 V under ambient conditions. The nonvolatile nature of the ON state and the ability to write, read, and erase the electrical states, fulfill the functionality of a rewritable memory. The mechanism associated with the memory effects was elucidated from molecular simulation results and in‐situ photoluminescence spectra of the GO–PFCz film under different electrical biases.