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Facile Synthesis of Wide‐Bandgap Fluorinated Graphene Semiconductors
Author(s) -
Chang Haixin,
Cheng Jinsheng,
Liu Xuqing,
Gao Junfeng,
Li Mingjian,
Li Jinghong,
Tao Xiaoming,
Ding Feng,
Zheng Zijian
Publication year - 2011
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201100699
Subject(s) - graphene , materials science , band gap , nanotechnology , chemical vapor deposition , semiconductor , graphite , graphene nanoribbons , graphene oxide paper , optoelectronics , composite material
The bandgap opening of graphene is extremely important for the expansion of the applications of graphene‐based materials into optoelectronics and photonics. Current methods to open the bandgap of graphene have intrinsic drawbacks including small bandgap openings, the use hazardous/harsh chemical oxidations, and the requirement of expensive chemical‐vapor deposition technologies. Herein, an eco‐friendly, highly effective, low‐cost, and highly scalable synthetic approach is reported for synthesizing wide‐bandgap fluorinated graphene (F‐graphene or or fluorographene) semiconductors under ambient conditions. In this synthesis, ionic liquids are used as the only chemical to exfoliate commercially available fluorinated graphite into single and few‐layer F‐graphene. Experimental and theoretical results show that the bandgap of F‐graphene is largely dependent on the F coverage and configuration, and thereby can be tuned over a very wide range.