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Nature of N 2p, Ti 3d, O 2p Hybridization of N‐Doped TiO 2 Nanotubes and Superior Photovoltaic Performance through Selective Atomic N Doping
Author(s) -
Han Kyu Sung,
Lee Dong Ki,
Lee Jung Woo,
Lee Ga In,
Kang Jeung Ku
Publication year - 2011
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.201001672
Subject(s) - doping , valence band , materials science , band gap , fermi level , valence (chemistry) , photovoltaic system , nanotechnology , optoelectronics , chemistry , electron , physics , biology , ecology , organic chemistry , quantum mechanics
Mixing it up! N 2p states of N‐doped TiO 2 nanotubes become predominant near the Fermi level, which is a discrete energy level at the top edge of a valence band, whereas it deteriorates the good hybridization between Ti 3d and O 2p. This leads to a reduced band gap for selective atomic N‐doped nanotubes and gives enhanced photovoltaic performance (see graphic).