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Organosilyl/‐germyl Polyoxotungstate Hybrids for Covalent Grafting onto Silicon Surfaces: Towards Molecular Memories
Author(s) -
Joo Nicoleta,
Renaudineau Séverine,
Delapierre Guillaume,
Bidan Gérard,
Chamoreau LiseMarie,
Thouvenot René,
Gouzerh Pierre,
Proust Anna
Publication year - 2010
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200903336
Subject(s) - covalent bond , chemistry , electrochemistry , cyclic voltammetry , grafting , triple bond , silicon , crystallography , polymer chemistry , double bond , organic chemistry , electrode , polymer
Organosilyl/‐germyl polyoxotungstate hybrids [PW 9 O 34 ( t BuSiO) 3 Ge(CH 2 ) 2 CO 2 H] 3− ( 1 a ), [PW 9 O 34 ( t BuSiO) 3 Ge(CH 2 ) 2 CONHCH 2 CCH] 3− ( 2 a ), [PW 11 O 39 Ge(CH 2 ) 2 CO 2 H] 4− ( 3 a ), and [PW 11 O 39 Ge(CH 2 ) 2 CONHCH 2 C≡CH] 4− ( 4 a ) have been prepared as tetrabutylammonium salts and characterized in solution by multinuclear NMR spectroscopy. The crystal structure of (NBu 4 ) 3 1 a⋅ H 2 O has been determined and the electrochemical behavior of 1 a and 2 a has been investigated by cyclic voltammetry. Covalent grafting of 2 a onto an n‐type silicon wafer has been achieved and the electrochemical behavior of the grafted clusters has been investigated. This represents the first example of covalent grafting of Keggin‐type clusters onto a Si surface and a step towards the realization of POM‐based multilevel memory devices.