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The Interplay between Steric and Electronic Effects in S N 2 Reactions
Author(s) -
Fernández Israel,
Frenking Gernot,
Uggerud Einar
Publication year - 2009
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200801833
Subject(s) - steric effects , chemistry , decomposition , computational chemistry , hydrogen bond , transition state , reaction coordinate , electronic effect , chemical physics , crystallography , molecule , stereochemistry , catalysis , organic chemistry
Myths of steric hindrance : In contrast with current opinion, energy decomposition analysis shows that the presence of bulky substituents at carbon leads to the release of steric repulsion in the transition state shown in the graphic. It is rather the weakening of the electrostatic attraction, and in particular the loss of attractive orbital interactions, that are responsible for the activation barrier.Quantum chemical calculations for S N 2 reactions of H 3 EX/X − systems, in which E=C or Si and X=F or Cl, are reported. In the case of the carbon system we also report on bulkier species in which the hydrogen atoms are substituted by methyl groups. It is shown how the variation in the individual energy terms of the Morokuma/Ziegler energy decomposition analysis (EDA) scheme along the reaction coordinate from reactants to products provides valuable insight into the essential changes that occur in the bond‐breaking/bond‐forming process during S N 2 reactions. The EDA results for the prototypical S N 2 reaction of the systems [X⋅⋅⋅R 3 E⋅⋅⋅X] − , in which the interacting fragments are [X⋅⋅⋅X] 2− and [R 3 E] + , have given rise to a new interpretation of the factors governing the reaction course. The EDA results for the carbon system (E=C) show that there is less steric repulsion and stronger electrostatic attraction in the transition structure than in the precursor complex and that the energy increase comes mainly from weaker orbital interactions. The larger barriers for systems in which R 3 is bulkier also do not arise from increased steric repulsion, which is actually released in the transition structure. It is rather the weakening of the electrostatic attraction, and in particular the loss of attractive orbital interactions, that are responsible for the activation barrier. The D 3 h energy minima of the silicon homologues [XH 3 SiX] − is driven by the large increase in the electrostatic attractions and also of stronger orbital interactions, while the steric interactions is destabilizing.