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Explorations of New Types of Second‐Order Nonlinear Optical Materials in Cd(Zn)‐V V ‐Te IV ‐O Systems
Author(s) -
Jiang HaiLong,
Huang ShuPing,
Fan Yang,
Mao JiangGao,
Cheng WenDan
Publication year - 2008
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200701440
Subject(s) - luminescence , acentric factor , zinc , vanadium oxide , materials science , crystallography , vanadium , cadmium , band gap , oxide , inorganic chemistry , chemistry , optoelectronics , metallurgy
Abstract Solid‐state reactions of zinc( II) or cadmium( II) oxide, V 2 O 5 , and TeO 2 at high temperature led to two novel quaternary compounds, namely, Zn 3 V 2 TeO 10 and Cd 4 V 2 Te 3 O 15 . The structure of Zn 3 V 2 TeO 10 is a complicated three‐dimensional (3D) network constructed by the interconnection of ZnO 5 , ZnO 6 , VO 4 , and TeO 4 polyhedra via corner‐ and edge‐sharing. Cd 4 V 2 Te 3 O 15 with an acentric structure features a 3D network in which the cadmium tellurite layers are further interconnected by both “isolated” VO 4 tetrahedra and one‐dimensional (1D) vanadium oxide helical chains. Cd 4 V 2 Te 3 O 15 displays a second harmonic generation (SHG) efficiency of about 1.4 times that of KH 2 PO 4 (KDP). Both compounds are direct band‐gap semiconductors and are transparent in the range of 0.6–10.0 μm. Measurements of luminescence indicate that both compounds exhibit broad emission bands in the blue‐light region.