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One‐Dimensional Bromo‐Bridged Ni III Complexes [Ni( S,S ‐bn) 2 Br]Br 2 ( S , S ‐bn=2 S ,3 S ‐diaminobutane): Synthesis, Physical Properties, and Electrostatic Carrier Doping
Author(s) -
Takaishi Shinya,
Yamashita Masahiro,
Matsuzaki Hiroyuki,
Okamoto Hiroshi,
Tanaka Hisaaki,
Kuroda Shinichi,
Goto Atsushi,
Shimizu Tadashi,
Takenobu Taishi,
Iwasa Yoshihiro
Publication year - 2008
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200701299
Subject(s) - antiferromagnetism , nuclear quadrupole resonance , crystallography , impurity , nickel , spin (aerodynamics) , spins , doping , chemistry , quadrupole , magnetic susceptibility , condensed matter physics , spectroscopy , materials science , atomic physics , physics , organic chemistry , thermodynamics , quantum mechanics
A new bromo‐bridged Ni III compound has been synthesized. This compound displayed a strong antiferromagnetic interaction between spins located on Ni III species ( J =(2350±500) K) that result from the strong covalency of the NiBr bond and the spin‐Peierls transition below 150 K. This was shown by the results of magnetic susceptibility and 81 Br nuclear quadrupole resonance spectroscopy analysis. We succeeded in the electrostatic carrier doping of a single crystalline sample by using a field‐effect transistor device. This compound also showed n‐type semiconductor behavior, which can be reasonably rationalized by the existence of a small amount of Ni II impurities.