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Metal‐Particle‐Induced, Highly Localized Site‐Specific Etching of Si and Formation of Single‐Crystalline Si Nanowires in Aqueous Fluoride Solution
Author(s) -
Peng Kuiqing,
Fang Hui,
Hu Juejun,
Wu Yin,
Zhu Jing,
Yan Yunjie,
Lee ShuitTong
Publication year - 2006
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200600032
Subject(s) - silicon , materials science , etching (microfabrication) , wafer , nanowire , aqueous solution , doping , nanotechnology , noble metal , silicon nanowires , metal , particle (ecology) , nanostructure , isotropic etching , fluoride , chemical engineering , inorganic chemistry , optoelectronics , metallurgy , chemistry , oceanography , engineering , layer (electronics) , geology
A straightforward metal‐particle‐induced, highly localized site‐specific corrosion‐like mechanism was proposed for the formation of aligned silicon‐nanowire arrays on silicon in aqueous HF/AgNO 3 solution on the basis of convincing experimental results. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nanowires with desirable doping characteristics. The novel electrochemical properties between silicon and active noble metals should be useful for preparing novel silicon nanostructures and also new optoelectronic devices.