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A Guideline to the Design of Molecular‐Based Materials with Long‐Lived Photomagnetic Lifetimes
Author(s) -
Létard JeanFrançois,
Guionneau Philippe,
Nguyen Olivier,
Costa José Sánchez,
Marcén Silvia,
Chastanet Guillaume,
Marchivie Mathieu,
GouxCapes Laurence
Publication year - 2005
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200500112
Subject(s) - photoswitch , spin crossover , context (archaeology) , spin states , materials science , metamaterial , crossover , photonics , nanotechnology , chemical physics , condensed matter physics , chemistry , physics , computer science , optoelectronics , photochemistry , paleontology , artificial intelligence , biology
Abstract Materials presenting a stable and reversible switch of physical properties in the solid state are of major interest either for fundamental interests or potential industrial applications. In this context, the design of metal complexes showing a light‐induced crossover from one spin state to another, leading to a major change of magnetic and optical properties, is probably one of the most appealing challenges. The so‐denoted spin‐crossover materials undergo, in some cases, a reversible photoswitch between two magnetic states, but, unfortunately, lifetimes of the photomagnetic states for compounds known so far are long enough only at low temperatures; this prohibits any applications. We have measured and collected the temperatures above which the photomagnetic effect disappears for more than sixty spin‐crossover compounds. On the basis of this large data base, a correlation between the nature of the coordination sphere of the metal and the photomagnetic lifetime can be drawn. Such correlation allows us to propose here a general guideline for the rational design of materials with long‐lived photomagnetic lifetimes. This result clearly opens the way towards room‐temperature photonic materials, based on the spin‐crossover phenomenon, which will be of great interest for future communication devices.