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Matrix Reactivity of Al and Ga Atoms (M) in the Presence of Silane: Generation and Characterization of the η 2 ‐Coordinated Complex M⋅SiH 4 , the Insertion Product HMSiH 3 , and the M I Species MSiH 3 in a Solid Argon Matrix
Author(s) -
Gaertner Benjamin,
Himmel HansJörg,
Macrae Victoria A.,
Downs Anthony J.,
Greene Tim M.
Publication year - 2004
Publication title -
chemistry – a european journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.687
H-Index - 242
eISSN - 1521-3765
pISSN - 0947-6539
DOI - 10.1002/chem.200305493
Subject(s) - silane , chemistry , photodissociation , isotopomers , matrix isolation , reactivity (psychology) , reagent , metal , silanes , photochemistry , crystallography , molecule , organic chemistry , medicine , alternative medicine , pathology
Matrix isolation experiments give evidence for the formation of the loosely bonded metal–silane complex M⋅SiH 4 by the spontaneous reaction of Al or Ga atoms (M) with silane in a solid Ar matrix at 12 K; however, Ga 2 appears to insert spontaneously into an SiH bond to form HGaGaSiH 3 , probably with the structure HGa(μ‐SiH 3 )Ga. In M⋅SiH 4 the metal atom is η 2 ‐coordinated by the silane, resulting in a species with C 2 v symmetry. The complex has a distinctive photochemistry: it can be converted on photolysis at λ ≈410 or ≈254 nm to its tautomer, HMSiH 3 , which also has a doublet ground electronic state and from which it can be regenerated with λ ≈580 nm radiation. Broadband UV‐visible photolysis ( λ =200–800 nm) results in decomposition of HMSiH 3 , the univalent species MSiH 3 being the only detectable product. The experimental data collected for several silane isotopomers (SiH 4 , SiD 4 , and SiD 3 H) and different reagent concentrations, together with the results of sophisticated quantum chemical calculations, are used to explore in detail the properties of the detected species and the reaction pathways compassing their formation.