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Adhesive Ion‐Gel as Gate Insulator of Electrolyte‐Gated Transistors
Author(s) -
Jeong Jaehoon,
Singaraju Surya Abhishek,
AghassiHagmann Jasmin,
Hahn Horst,
Breitung Ben
Publication year - 2020
Publication title -
chemelectrochem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.202000305
Subject(s) - electrolyte , materials science , transistor , electrode , subthreshold conduction , inkwell , fabrication , ion , insulator (electricity) , optoelectronics , ionic conductivity , ionic bonding , thin film transistor , conductivity , adhesive , nanotechnology , composite material , electrical engineering , chemistry , voltage , layer (electronics) , medicine , alternative medicine , organic chemistry , pathology , engineering
In this study, a facile method to fabricate a cohesive ion‐gel based gate insulator for electrolyte‐gated transistors is introduced. The adhesive and flexible ion‐gel can be laminated easily on the semiconducting channel and electrode manually by hand. The ion‐gel is synthesized by a straightforward technique without complex procedures and shows a remarkable ionic conductivity of 4.8 mS cm −1 at room temperature. When used as a gate insulator in electrolyte‐gated transistors (EGTs), an on/off current ratio of 2.24×10 4 and a subthreshold swing of 117 mV dec −1 can be achieved. This performance is roughly equivalent to that of ink drop‐casted ion‐gels in electrolyte‐gated transistors, indicating that the film‐attachment method might represent a valuable alternative to ink drop‐casting for the fabrication of gate insulators.