Converting a Semiconducting Polymer from Ambipolar into n‐Type Dominant by Amine End‐Capping | Zendy

Quinn Jesse | Zendy; Patel Haritosh | Zendy; Haider Fezza | Zendy; Khan Daid A. | Zendy; Li Yuning | Zendy

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Converting a Semiconducting Polymer from Ambipolar into n‐Type Dominant by Amine End‐Capping

Author(s) -

Quinn Jesse,

Patel Haritosh,

Haider Fezza,

Khan Daid A.,

Li Yuning

Publication year - 2017

Publication title -

chemelectrochem

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 59

ISSN - 2196-0216

DOI - 10.1002/celc.201600628

Subject(s) - ambipolar diffusion , triphenylamine , materials science , polymer , acceptor , charge carrier , amine gas treating , semiconductor , transistor , charge (physics) , optoelectronics , electron , photochemistry , polymer chemistry , chemistry , physics , organic chemistry , condensed matter physics , quantum mechanics , voltage , composite material

A donor‐acceptor polymer of (3 E ,7 E )‐3,7‐bis(2‐oxoindolin‐3‐ylidene)benzo[1,2‐ b : 4,5‐ b ′]difuran‐2,6(3 H ,7 H )‐dione (IBDF) and bithiophene (BT) exhibits typical ambipolar charge transport behaviour in organic thin film transistors. Using the electron rich triphenylamine as an end capping group, a notable suppression of hole transport is observed. This interesting phenomenon is accounted for by the hole trapping effect of the triphenylamine end‐capper. Thus, this study provides a novel and facile approach to tuning the charge carrier polarity of a polymer semiconductor from ambipolar to n‐type dominant.

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