Light‐Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO 3  Film for a Flexible Multistate High‐Storage Memory Device | Zendy

Sun Bai | Zendy; Tang Mei | Zendy; Gao Ju | Zendy; Li Chang Ming | Zendy

Premium

Light‐Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO 3 Film for a Flexible Multistate High‐Storage Memory Device

Author(s) -

Sun Bai,

Tang Mei,

Gao Ju,

Li Chang Ming

Publication year - 2016

Publication title -

chemelectrochem

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 59

ISSN - 2196-0216

DOI - 10.1002/celc.201600002

Subject(s) - materials science , ferroelectricity , optoelectronics , non volatile memory , computer data storage , polyimide , resistive touchscreen , nanotechnology , computer science , electrical engineering , computer hardware , layer (electronics) , engineering , dielectric

A flexible memory device with an ITO/BiFeO 3 /Ti/Polyimide structure is prepared for light‐controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high‐storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light‐controlled non‐volatile multistate memory device with a high capacity and low cost.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research