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Light‐Controlled Simultaneous Resistive and Ferroelectricity Switching Effects of BiFeO 3 Film for a Flexible Multistate High‐Storage Memory Device
Author(s) -
Sun Bai,
Tang Mei,
Gao Ju,
Li Chang Ming
Publication year - 2016
Publication title -
chemelectrochem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.201600002
Subject(s) - materials science , ferroelectricity , optoelectronics , non volatile memory , computer data storage , polyimide , resistive touchscreen , nanotechnology , computer science , electrical engineering , computer hardware , layer (electronics) , engineering , dielectric
A flexible memory device with an ITO/BiFeO 3 /Ti/Polyimide structure is prepared for light‐controlled simultaneous resistive and ferroelectricity switching effects, achieving a multistate high‐storage memory capacity. The mechanism for superior storage performance is discussed in detail. This work holds a great promise for a flexible and wearable light‐controlled non‐volatile multistate memory device with a high capacity and low cost.