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Inside Cover: Combined Secondary Ion Mass Spectrometry Depth Profiling and Focused Ion Beam Analysis of Cu Films Electrodeposited under Oscillatory Conditions (ChemElectroChem 5/2015)
Author(s) -
Hai Nguyen T. M.,
Lechner David,
Stricker Florian,
Furrer Julien,
Broekmann Peter
Publication year - 2015
Publication title -
chemelectrochem
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.201590021
Subject(s) - ion , wafer , analytical chemistry (journal) , deposition (geology) , materials science , mass spectrometry , secondary ion mass spectrometry , ion beam deposition , focused ion beam , ion beam , chemistry , optoelectronics , chromatography , organic chemistry , paleontology , sediment , biology
The figure shows a Cu wafer that has been processed with an additive package (SPS, Imep). The graph superimposed on the picture shows a characteristic linear‐sweep voltammogram of the Cu deposition process in the presence of these additives. The N‐shaped negative differential resistance is the physical origin of the oscillatory behavior during Cu deposition under galvanostatic conditions as reported by P. Broekmann et al. on p. 664.