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High‐Power‐Density Semiconductor–Air Batteries Based on P‐Type Germanium with Different Crystal Orientations
Author(s) -
Ocon Joey D.,
Abrenica Graniel Harne A.,
Lee Jaeyoung
Publication year - 2016
Publication title -
chemelectrochem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.201500488
Subject(s) - anode , semiconductor , materials science , germanium , crystal (programming language) , current (fluid) , range (aeronautics) , power (physics) , current density , optoelectronics , electrical engineering , chemistry , silicon , electrode , physics , thermodynamics , composite material , engineering , quantum mechanics , computer science , programming language
The quasi‐perpetual discharge behavior of Ge anodes in semiconductor–air batteries was first demonstrated in our previous studies, marked by high anode utilization and a flat discharge profile over long‐term discharge operation. In this Article, we show the crystal orientation dependence of the discharge behavior of p‐type Ge anodes. In general, p‐type Ge anodes at the low‐index crystal indices could operate in the milliampere‐scale current range and at high power densities, in stark contrast to the current‐limited operation of Si–air batteries.