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Improving Capacitance by Introducing Nitrogen Species and Defects into Graphene
Author(s) -
Tian Ke,
Liu WuJun,
Zhang Shun,
Zeng Raymond J.,
Jiang Hong
Publication year - 2015
Publication title -
chemelectrochem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.201500017
Subject(s) - capacitance , graphene , capacitive sensing , nitrogen , materials science , ammonia , electrochemistry , chemical engineering , supercapacitor , nanotechnology , chemistry , electrode , organic chemistry , computer science , engineering , operating system
Nitrogen‐doped graphene (NG) materials were prepared with different levels of ammonia modification and their capacitive performances were compared. The surface structure, nitrogen species and contents, as well as the defects and disorders of the as‐prepared NG materials were investigated. Electrochemical measurements showed that the capacitance of the NG materials is significantly higher than that of pristine graphene and varies with the ammonia dosage. Graphene modified with 20 mL of ammonia possesses the highest capacitance among all of the materials studied. Further investigation showed that nitrogen species and defects in NG perform pivotal functions in improving capacitance; by contrast, the surface morphology had little influence on the capacitance of the as‐prepared NG materials. Results suggested that adjusting the N1 pyridinic N content is an efficient method for elevating the capacitive performance of NG materials.