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Electrodeposition of Crystalline Gallium‐Doped Germanium and Si x Ge 1− x from an Ionic Liquid at Room Temperature
Author(s) -
Lahiri Abhishek,
Olschewski Mark,
Carstens Timo,
El Abedin Sherif Zein,
Endres Frank
Publication year - 2015
Publication title -
chemelectrochem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.201402374
Subject(s) - germanium , gallium , materials science , doping , germanium oxide , crystallography , analytical chemistry (journal) , silicon , metallurgy , chemistry , optoelectronics , chromatography
In this paper, we show the electrodeposition of both gallium‐doped crystalline germanium and Si x Ge 1− x directly on copper at room temperature from an ionic liquid. Germanium and Si x Ge 1− x were electrodeposited on a thin layer of electrodeposited gallium on copper, thereby leading to the formation of crystalline gallium‐doped germanium and Si x Ge 1− x . From the microstructure, it appears that Ge and Si x Ge 1− x dissolve in Ga to form an amalgam, which then recrystallises to form a crystalline structure. X‐ray diffraction confirmed the formation of crystalline phases. The indirect band gap of the gallium‐doped germanium measured by using scanning tunnelling spectroscopy is (0.9±0.1) eV.