Electrodeposition of Crystalline Gallium‐Doped Germanium and Si x Ge 1− x from an Ionic Liquid at Room Temperature

In this paper, we show the electrodeposition of both gallium‐doped crystalline germanium and Si x Ge 1− x directly on copper at room temperature from an ionic liquid. Germanium and Si x Ge 1− x were electrodeposited on a thin layer of electrodeposited gallium on copper, thereby leading to the formation of crystalline gallium‐doped germanium and Si x Ge 1− x . From the microstructure, it appears that Ge and Si x Ge 1− x dissolve in Ga to form an amalgam, which then recrystallises to form a crystalline structure. X‐ray diffraction confirmed the formation of crystalline phases. The indirect band gap of the gallium‐doped germanium measured by using scanning tunnelling spectroscopy is (0.9±0.1) eV.