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Redox‐Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
Author(s) -
Valov Ilia
Publication year - 2014
Publication title -
chemelectrochem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 59
ISSN - 2196-0216
DOI - 10.1002/celc.201300165
Subject(s) - neuromorphic engineering , resistive touchscreen , resistive random access memory , nanotechnology , memristor , materials science , electronic circuit , semiconductor , computer science , scale (ratio) , non volatile memory , electrochemistry , electrode , optoelectronics , electrical engineering , voltage , engineering , physics , artificial intelligence , artificial neural network , quantum mechanics , computer vision
Resistive switching memories (RRAMs) are an emerging research field, which is currently of focused interest for both the interdisciplinary scientific community and industry. RRAMs are nano‐electrochemical systems with great potential as a disruptive technology for the semiconductor industry as well as for a number of applications such as memory, logic and analog circuits, memristive operations, neuromorphic applications and computing. The present review aims to present the current state‐of‐the‐art knowledge on redox‐based resistive switching RRAMs, highlighting the role of the interfaces, discussing the electrochemical kinetics during formation of nanofilaments, and to relate them to the more fundamental issue of microscopic description of electrochemical processes at the atomic scale.