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Pbs‐field‐effect‐transistor for heavy metal concentration monitoring
Author(s) -
Kullick Thomas,
Quack Ralf,
Röhrkasten Cornelia,
Pekeler Thomas,
Scheper Thomas,
Schügerl Karl
Publication year - 1995
Publication title -
chemical engineering and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.403
H-Index - 81
eISSN - 1521-4125
pISSN - 0930-7516
DOI - 10.1002/ceat.270180402
Subject(s) - field effect transistor , transistor , metal ions in aqueous solution , metal , analytical chemistry (journal) , chemistry , ion , sensitivity (control systems) , layer (electronics) , materials science , nanotechnology , chromatography , electrical engineering , electronic engineering , voltage , organic chemistry , engineering
A simple and inexpensive Pbs‐FET with high sensitivity and short response time was developed which consists of a PbS layer on a pH‐sensitive gate of a field effect transistor. The PbS‐layer was prepared with simple wet precipitations technique. The PbS‐FET has about the same selectivities for Pb 2+ ‐and for Cu 2+ ‐ions, but only slight sensitivity for Cd 2+ ‐and Zn 2+ ‐ions. The sensor was integrated in a FIA system. By variing the injection time the measuring range varied between 10 −1 ‐10 −6 and 10 −2 ‐10 −8 mol Pb 2+ /1. The PbS‐FET‐FIA system is suitable for monitoring of Pb 2+ concentrations in drinking water.