Pbs‐field‐effect‐transistor for heavy metal concentration monitoring | Zendy

Kullick Thomas | Zendy; Quack Ralf | Zendy; Röhrkasten Cornelia | Zendy; Pekeler Thomas | Zendy; Scheper Thomas | Zendy; Schügerl Karl | Zendy

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Pbs‐field‐effect‐transistor for heavy metal concentration monitoring

Author(s) -

Kullick Thomas,

Quack Ralf,

Röhrkasten Cornelia,

Pekeler Thomas,

Scheper Thomas,

Schügerl Karl

Publication year - 1995

Publication title -

chemical engineering and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.403

H-Index - 81

eISSN - 1521-4125

pISSN - 0930-7516

DOI - 10.1002/ceat.270180402

Subject(s) - field effect transistor , transistor , metal ions in aqueous solution , metal , analytical chemistry (journal) , chemistry , ion , sensitivity (control systems) , layer (electronics) , materials science , nanotechnology , chromatography , electrical engineering , electronic engineering , voltage , organic chemistry , engineering

A simple and inexpensive Pbs‐FET with high sensitivity and short response time was developed which consists of a PbS layer on a pH‐sensitive gate of a field effect transistor. The PbS‐layer was prepared with simple wet precipitations technique. The PbS‐FET has about the same selectivities for Pb 2+ ‐and for Cu 2+ ‐ions, but only slight sensitivity for Cd 2+ ‐and Zn 2+ ‐ions. The sensor was integrated in a FIA system. By variing the injection time the measuring range varied between 10 −1 ‐10 −6 and 10 −2 ‐10 −8 mol Pb 2+ /1. The PbS‐FET‐FIA system is suitable for monitoring of Pb 2+ concentrations in drinking water.

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