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Trichlorosilane chlorination in a multiphase multicomponent photoreactor
Author(s) -
Schirmeister Reinhard,
Hoffmann Ulrich
Publication year - 1992
Publication title -
chemical engineering and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.403
H-Index - 81
eISSN - 1521-4125
pISSN - 0930-7516
DOI - 10.1002/ceat.270150202
Subject(s) - trichlorosilane , chemistry , kinetics , photochemistry , light intensity , chemical kinetics , silicon , gas phase , irradiation , wavelength , semiconductor , photocatalysis , catalysis , chemical engineering , organic chemistry , materials science , optics , optoelectronics , physics , quantum mechanics , nuclear physics , engineering
The photochemical reaction SiHCl 3 +Cl 2 →SiCl 4 +HCl is of industrial importance in the production of pure silicon for the semiconductor industry. The present paper deals with an experimental investigation of the kinetics of this purification step. The main reaction occurs in the liquid phase and is initiated by light. In this gas‐liquid reaction system, all components, which are present in both phases, were analyzed by gas chromatography. Reaction progress was monitored by recording the pressure rise. Apart from the influence of wavelength and radiation intensity on the above photoreaction, reactions in the absence of light and on the wall were also investigated.