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Angular Dependence of Si 3 N 4 Etching in C 4 F 6 /CH 2 F 2 /O 2 /Ar Plasmas
Author(s) -
Kim Jun-Hyun,
Cho Sung-Woon,
Kim Chang-Koo
Publication year - 2017
Publication title -
chemical engineering and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.403
H-Index - 81
eISSN - 1521-4125
pISSN - 0930-7516
DOI - 10.1002/ceat.201700126
Subject(s) - fluorocarbon , etching (microfabrication) , deposition (geology) , sputtering , analytical chemistry (journal) , plasma , chemistry , plasma etching , reactive ion etching , thin film , materials science , nanotechnology , physics , organic chemistry , layer (electronics) , paleontology , quantum mechanics , sediment , biology
The dependence of Si 3 N 4 etching on ion‐incident angles is investigated at various CH 2 F 2 flow rates in C 4 F 6 /CH 2 F 2 /O 2 /Ar plasmas. The normalized etch yield (NEY) curves for Si 3 N 4 imply that physical sputtering is a major contributor to Si 3 N 4 etching. An increase in the amount of CH 2 F 2 in the plasma produces thicker and more etch‐resistant fluorocarbon films. Systematic analyses on deposition and etching of the passively deposited fluorocarbon films on Si 3 N 4 in a C 4 F 6 /CH 2 F 2 /O 2 /Ar plasma show that the normalized deposition rate of the fluorocarbon film is nearly the same and unaffected by the CH 2 F 2 flow rate while etching of fluorocarbon films is similar to etching of Si 3 N 4 , thus, etching of the fluorocarbon film, rather than its deposition, limits Si 3 N 4 etching in C 4 F 6 /CH 2 F 2 /O 2 /Ar plasmas.