Premium
Facile Construction of Defect‐rich Rhenium Disulfide/Graphite Carbon Nitride Heterojunction via Electrostatic Assembly for Fast Charge Separation and Photoactivity Enhancement
Author(s) -
Li Haiping,
Liang Zhiwei,
Deng Quanhua,
Hu Ms. Tingxia,
Du Na,
Hou Wanguo
Publication year - 2019
Publication title -
chemcatchem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.497
H-Index - 106
eISSN - 1867-3899
pISSN - 1867-3880
DOI - 10.1002/cctc.201802021
Subject(s) - heterojunction , materials science , photocatalysis , semiconductor , graphite , carbon nitride , visible spectrum , absorption edge , nitride , charge carrier , graphitic carbon nitride , optoelectronics , photochemistry , chemical engineering , nanotechnology , band gap , chemistry , catalysis , organic chemistry , composite material , layer (electronics) , engineering
Graphite carbon nitride (CN) is one of the most researched visible light photocatalysts, but it still cannot be used practically because of its low photoactivity resulting mainly from rapid photogenerated charge recombination. To accelerate charge separation, CN was herein electrostatically assembled with ReS 2 , a two‐dimensional semiconductor to construct heterojunction for the first time. The electrostatic and coordination interactions between CN and defect‐rich ReS 2 make them close contact to form heterojunctions. The ReS 2 /CN heterojunction exhibits higher photocatalytic performance in pollutant degradation owing to faster generation of reactive oxygen species than CN, as well as increased visible and near‐infrared light absorption because of strong photoabsorption of defect‐rich ReS 2 . The accelerated reactive oxygen species generation for the heterojunction arises from accelerated charge separation, especially fast transfer of holes from CN to ReS 2 in assistance of interfacial electric field and great valance‐band edge difference. This work provides a novel CN‐based heterojunction for photoactivity improvement and illustrates significance of electrostatic attraction in fabricating heterojunctions.