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Nickel‐Loaded Zirconia Catalysts with Large Specific Surface Area for High‐Temperature Catalytic Applications
Author(s) -
Peters Andreas,
Nouroozi Fatemeh,
Richter Dennis,
Lutecki Michal,
Gläser Roger
Publication year - 2011
Publication title -
chemcatchem
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.497
H-Index - 106
eISSN - 1867-3899
pISSN - 1867-3880
DOI - 10.1002/cctc.201000277
Subject(s) - cubic zirconia , catalysis , calcination , nickel , inductively coupled plasma , materials science , specific surface area , ammonia , temperature programmed reduction , chemical engineering , zirconium , inorganic chemistry , crystallite , bet theory , chemistry , metallurgy , ceramic , organic chemistry , physics , quantum mechanics , engineering , plasma
Highly porous and thermally stable zirconia is prepared by a template‐assisted route using dodecylamine (DDA) and a post‐treatment in ammonia solution at different pH. The resulting materials are calcined at 700 °C and characterized by elemental analysis, optical emission spectrometry with inductively coupled plasma (ICP‐OES), N 2 sorption, XRD, high‐resolution TEM, and, after loading with 5 wt % nickel, also by temperature‐programmed reduction and temperature‐programmed desorption of ammonia (TPDA). With increasing pH of the post‐treatment, the specific surface area increases up to 156 m 2 g −1 and the diameter of the predominantly tetragonal crystallites decreases from 10.3 to 5.7 nm, independently of the presence of Ni. The high specific surface area is shown to be a result of the incorporation of silicon (<2.5 wt %) dissolved from the glass vessels during the post‐treatment. Despite the presence of acid sites, the Ni‐loaded zirconia are active and selective catalysts in the dry reforming of CH 4 with CO 2 at 750 °C. With conversions up to 79 % and H 2 selectivities up to 87 %, the catalysts supported on zirconia prepared by the DDA route and ammonia post‐treatment are significantly more active than those with zirconia supports prepared by conventional precipitation or in the absence of silicon or DDA.