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TaNi 2 .05Te 3 , eine Verbindung mit “aufgefüllter” TaFe 1+ x Te 3 ‐Struktur
Author(s) -
Neuhausen Jörg,
Tremel Wolfgang,
Evstafyev Vladimir K.,
Kremer Reinhard K.
Publication year - 1994
Publication title -
chemische berichte
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 0009-2940
DOI - 10.1002/cber.19941270913
Subject(s) - chemistry , telluride , crystallography , tellurium , tetragonal crystal system , chalcogenide , metal , catenation , electrical resistivity and conductivity , atom (system on chip) , chalcogen , crystal structure , inorganic chemistry , dna , biochemistry , organic chemistry , computer science , electrical engineering , embedded system , engineering
TaNi 2.05 Te 3 , a Novel Telluride with “Stuffed” TaFe 1+x Te 3 Structure The novel metal‐rich layer compound TaNi 2.05 Te 3 was synthesized from the elements. Its structure contains TaNi 2 Te 3 layers which are interconnected by Ni atoms on partially occupied tetragonal‐pyramidal sites located between the layers. The title compound and the related telluride TaFe 1.14 Te 3 form a pair of compounds differing only in the occupation or nonoccupation of one 3d‐material atom site. Therefore, the structure of TaNi 2.05 Te 3 , which is stabilized by interstial Ni atoms, can be regarded as a “stuffed” TaFe 1.14 Te 3 type. Pairs of compounds with a similar structural relationship seem to be of general importance in early transition‐metal chalcogenide chemistry. The existence of TaNi 2.05 Te 3 was recently proposed based on the results of extended Hückel band‐structure calculations. TaNi 2.05 Te 3 is a metallic conductor according to the results of four‐probe resistivity measurements.