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Reaktionen an Silicium‐Silicium‐Bindungen, 3. Ein neuer Weg zur Knüpfung von Si – Ge‐und Si – Sn‐Bindungen: Hexachlordisilan‐Spaltung von Organometallphosphanen und (Trichlorsilyl)phosphan‐Recycling
Author(s) -
Martens Reiner,
Mont WolfWalther Du
Publication year - 1993
Publication title -
chemische berichte
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 0009-2940
DOI - 10.1002/cber.19931260508
Subject(s) - chemistry , stannane , transmetalation , bond cleavage , germane , cleavage (geology) , silicon , medicinal chemistry , stereochemistry , germanium , catalysis , organic chemistry , fracture (geology) , engineering , geotechnical engineering
Reactions at Silicon‐Silicon Bonds, 3 [1] . – A New Path to Si – Ge and Si – Sn Bonds: Hexachlorodisilane Cleavage of Organometalphosphanes and (Trichlorosilyl)phosphane Recycling Trimethyl(trichlorsilyl)germane and ‐stannane ( 4, 5 ) have been prepared through hexachlorodisilane cleavage by germyl‐and stannylphosphanes R 2 PMMe 3 ( 1, 2 , R i 1‐C 3 H 7 , t 1‐C 4 H 9 ; MGe, Sn). The (trichlorosilyl)phosphane byproduct R 2 PSiCl 3 ( 3 ) may be recycled by transmetalation and methylation steps to provide starting germylphosphane (MeGeCl 3 , 2 MeLi) and stannylphosphane (Me 3 SnCl, 3 MeLi).