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Struktur eines Silaethen‐Aminaddukts
Author(s) -
Wiberg Nils,
Joo Kwang;Suk,
Polborn Kurt
Publication year - 1993
Publication title -
chemische berichte
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.667
H-Index - 136
eISSN - 1099-0682
pISSN - 0009-2940
DOI - 10.1002/cber.19931260112
Subject(s) - chemistry , tetrahedron , adduct , silicon , crystallography , amine gas treating , bond length , planar , molecular geometry , lewis acids and bases , stereochemistry , molecule , crystal structure , organic chemistry , catalysis , computer graphics (images) , computer science
Structure of a Silaethene Amine Adduct The reaction of Me 2 SiBr‐CBr(SiMe 2 Ph) 2 with PhLi in the presence of NEtMe 2 leads to EtMe 2 N…SiMe 2 …C(SiMe 2 Ph) 2 ( 3 ). NEtMe 2 is coordinated to the central silicon. The SiN distance is comparably long (1.988 Ȧ). The bond distance between the central (distorted tetrahedra) silicon and the central (planar) carbon (1.761 Ȧ) is longer than the SiC distances in silaethenes (1.70 Ȧ) and shorter than the SiC distances in silaethanes (1.87 Ȧ). From a comparison of structures of D…SiMe 2 \documentclass{article}\pagestyle{empty}\begin{document}$ \underline \cdots $\end{document} C(SiR 3 ) 2 it is concluded that increasing Lewis basicity of D (THF < NEtMe 2 < F¯) leads to a SiC bond lengthening and to more regularity in the geometry of the distorted tetrahedral silicon.