Bis[bis(trimethylsilyl)methyl]galliumbromid und monomeres {Bis[bis(trimethylsilyl)methyl]gallium}[tris(trimethylsilyl)silyl]tellurid [(Me 3 Si) 2 CH] 2 Ga–TeSi(SiMe 3 ) 3

Bis[bis(trimethylsilyl)methyl]gallium Bromide and Monomeric {Bis[bis(trimethylsilyl]methyl]gallium} [Tris(trimethylsilyl)silyl]telluride [(Me 3 Si) 2 CH] 2 Ga–TeSi(SiMe 3 ) 3 Bis[bis(trimethylsilyl)methyl]gallium bromide GaBr[CH(SiMe 3 ) 2 ] 2 ( 4 ), prepared from Ga 2 Br 4 · 2 dioxane and bis(trimethylsilyl)‐methyllithium in the molar ratio of 1:3, reacts with the sterically high‐shielded lithium tris(trimethylsilyl)silyltelluride · DME to yield [(Me 3 Si) 2 CH] 2 Ga–TeSi(SiMe 3 ) 3 ( 5 ). 5 can also be synthesized by a metathetic reaction between tetrakis‐[bis(trimethylsilyl)methyl]digallium( 4 ) and bis[tris(trimethylsilyl)silyl]ditellane in toluene at 100°C. A crystal structure determination shows the compound to be monomeric in the solid state and the atoms of the central C 2 Ga–TeSi moiety to lie in the mirror plane of the molecule. The short Ga–Te distance of 253.5(1) pm as well as a hindered rotation (Δ E rot ≈ 50 kJ · mol ‐1 ) as detected by NMR measurements might be interpreted in terms of a π interaction between gallium and tellurium.