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Sharp Phase Transition by the Enhanced Lattice Stability of Low‐Temperature Phase of Cr‐Doped VO 2
Author(s) -
Hong SeongCheol,
Lee Myeongsoon,
Lee Myung Won,
Kim Don
Publication year - 2021
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.12353
Subject(s) - doping , materials science , transition point , sapphire , phase transition , condensed matter physics , transition temperature , lattice constant , metal–insulator transition , analytical chemistry (journal) , lattice (music) , metal , diffraction , chemistry , physics , optics , superconductivity , thermodynamics , optoelectronics , metallurgy , laser , chromatography , acoustics
We have prepared Cr‐doped VO 2 film (V 1− x Cr x O 2 , 0 ≤ x ≤ 0.15) on a c ‐cut sapphire plate (0001). The insulator to metal transition (IMT) behavior of the VO 2 was observed by the resistance and transmittance measurements near the phase transition point ( T c ~ 340 K). Whereas the starting point of metal to insulator transition ( T HE ) was nearly constant at 350 K ( x ≤ 0.03), the starting point of the insulator to metal transition ( T HS ) was shifted from 308 K ( x = 0) to 326 K ( x = 0.05), suggesting that the Cr‐doped VO 2 lattice is significantly stabilized below T c of the VO 2 . The difference between T HS and T HE and the gap between thermal cycles (hysteresis gap), which reflect the sharpness of the phase transition, were minimal at x = 0.03–0.05 in V 1− x Cr x O 2 . This sudden phase transition of Cr‐doped VO 2 is expected to be uniquely advantageous for sensitive on–off applications.