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Effect of an Alkoxyliertes Beta Naphthol on Cu Electrodeposition for Application to Low‐Resistivity Cu Interconnects
Author(s) -
Suh Hoyoung,
Heo Mina,
Lee JiHyun,
Kim JinGyu,
Hong Kimin
Publication year - 2020
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.12003
Subject(s) - electrical resistivity and conductivity , materials science , trench , electrolyte , thin film , grain size , surface roughness , interconnection , copper , void (composites) , surface finish , chemical engineering , metallurgy , composite material , nanotechnology , electrode , chemistry , electrical engineering , computer network , layer (electronics) , engineering , computer science
Cu thin films were electrodeposited using electrolytes containing alkoxyliertes beta naphthol (ABN) as an organic additive, which shows a strong suppressing effect similar to PEG10000. The surface roughness of Cu thin film decreased, while the grain size remained unchanged with increasing ABN concentration. Consequently, the resistivity of Cu thin film was reduced by 41% compared to Cu thin film electrodeposited using pure electrolyte. In addition, the void free interconnect wire was fabricated by filling of 70‐nm wide trench using only ABN, without the help of any accelerator or leveler.