Influences of Graphene Surface Treatment Temperature on a Growth of  Al 2 O 3   Film by Atomic Layer Deposition on Graphene | Zendy

Park Yong Hyun | Zendy; Lee Sang Woon | Zendy

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Influences of Graphene Surface Treatment Temperature on a Growth of Al 2 O 3 Film by Atomic Layer Deposition on Graphene

Author(s) -

Park Yong Hyun,

Lee Sang Woon

Publication year - 2017

Publication title -

bulletin of the korean chemical society

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.237

H-Index - 59

ISSN - 1229-5949

DOI - 10.1002/bkcs.11215

Subject(s) - graphene , nucleation , atomic layer deposition , materials science , deposition (geology) , layer (electronics) , chemical engineering , nanotechnology , analytical chemistry (journal) , chemistry , organic chemistry , paleontology , sediment , engineering , biology

Influences of temperature on graphene surface treatment using trimethylaluminium ( TMA ) and H 2 O were investigated for a growth of Al 2 O 3 film by atomic layer deposition ( ALD ) on graphene. It has been reported that a nucleation of Al 2 O 3 film on the graphene surface was enhanced significantly by a surface treatment using TMA and H 2 O at 100 ° C prior to the deposition of Al 2 O 3 film by ALD at the same temperature. Here, we investigate influences of the surface treatment temperature on the nucleation of Al 2 O 3 film grown by ALD on graphene surface. It is revealed that the nucleation of Al 2 O 3 film is degraded as the surface treatment temperature increases from 150 to 200°C. The origin of the deteriorated nucleation of Al 2 O 3 film is attributed to a decreased density of C–O and OC–O defects on the graphene surface at the high temperature (200 ° C).

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