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A Novel Chemical Route to Atomic Layer Deposition of ZnS Thin Film from Diethylzinc and 1,5‐Pentanedithiol
Author(s) -
Ko DongHyun,
Kim Sungjoon,
Jin Zhenyu,
Shin Seokhee,
Lee Sun Young,
Min YoSep
Publication year - 2017
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.11153
Subject(s) - diethylzinc , atomic layer deposition , x ray photoelectron spectroscopy , atomic layer epitaxy , thin film , amorphous solid , chemisorption , layer (electronics) , materials science , deposition (geology) , chemical engineering , chemical bath deposition , nanotechnology , chemistry , crystallography , catalysis , organic chemistry , paleontology , sediment , engineering , biology , enantioselective synthesis
This study describes a novel chemical route to grow ZnS thin films via atomic layer deposition ( ALD ). By using diethylzinc and 1,5‐pentanedithiol as precursors of Zn and S, respectively, ZnS films are grown on substrates with an atomic precision by repeating self‐limiting chemisorption of each precursor. The growth‐per‐cycle of the ALD process is around 0.1 Å per cycle at 150°C, and the as‐grown films are characterized to be amorphous ZnS by X‐ray diffraction and X‐ray photoelectron spectroscopy.