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Effect of Radio Frequency Power on the Physicochemical Properties of MoS 2 Films Obtained by rf Magnetron Sputtering
Author(s) -
Park Juyun,
Kang YongCheol
Publication year - 2016
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.10864
Subject(s) - x ray photoelectron spectroscopy , rf power amplifier , analytical chemistry (journal) , materials science , radio frequency , thin film , contact angle , sputter deposition , sputtering , chemistry , optoelectronics , nuclear magnetic resonance , nanotechnology , composite material , electrical engineering , amplifier , physics , cmos , chromatography , engineering
This paper presents the results of the fabrication and characterization of MoS 2 thin films obtained at different radio frequency (rf) power using a surface profiler, a 4‐point probe, X‐ray diffraction ( XRD ), X‐ray photoelectron spectroscopy ( XPS ), and distilled water and ethylene glycol contact angle measurements. The thickness of MoS 2 thin films increased from 100 to 240 nm as the rf power increased from 100 to 200 W. The surface resistance increased with increasing rf power. The high‐resolution XPS spectra indicated that Mo species with lower oxidation states formed in the MoS 2 thin films at higher rf power. The ratio of Mo/S was independent of the rf power. The total surface‐free energy ( SFE ) varied by changing the rf power. The contribution of polar SFE was greater than dispersive SFE to the total SFE for all MoS 2 films. The changing propensity of polar SFE was similar to the total SFE .