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Successful Fabrication of GaN Epitaxial Layer on Non‐Catalytically‐grown Graphene
Author(s) -
Hwang Sung Won,
Choi SukHo
Publication year - 2016
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.10809
Subject(s) - graphene , materials science , sapphire , epitaxy , optoelectronics , nucleation , fabrication , substrate (aquarium) , layer (electronics) , light emitting diode , nanotechnology , chemistry , laser , optics , medicine , physics , alternative medicine , oceanography , organic chemistry , pathology , geology
Sapphire is widely used as a substrate for the growth of GaN epitaxial layer ( EPI ), but has several drawbacks such as high cost, large lattice mismatch, non‐flexibility, and so on. Here, we first employ graphene directly grown on Si or sapphire substrate as a platform for the growth and lift‐off of GaN ‐light‐emitting diode ( LED ) EPI , useful for not only recycling the substrate but also transferring the GaN‐LED EPI to other flexible substrates. Sequential standard processes of nucleation/recrystallization of GaN seeds and deposition of undoped (u‐) GaN / AlN buffer layer were done on graphene/substrate before the growth of GaN‐LED EPI , accompanied by taping and lift‐off of u‐ GaN / AlN or GaN‐LED EPI . This approach can overcome the limitations by the catalytic growth and transfer of graphene, and make the oxygen‐plasma treatment of graphene for the growth of GaN EPI unnecessary.