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Hydrocarbon Incorporation Effect on the Electrical Properties of Low Dielectric Constant SiCOH Films Deposited with Tetrakis(trimethylsilyloxy)silane and Cyclohexane Precursors
Author(s) -
Kim Hoonbae,
Kang Wontak,
Seo HyunJin,
Jung Donggeun,
Boo JinHyo
Publication year - 2015
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.10544
Subject(s) - hydrocarbon , cyclohexane , silane , chemical vapor deposition , analytical chemistry (journal) , chemistry , annealing (glass) , dielectric , fourier transform infrared spectroscopy , chemical engineering , organic chemistry , materials science , composite material , optoelectronics , engineering
SiCOH films containing hydrocarbon porogens were prepared using a plasma enhanced chemical vapor deposition system. Their chemical and electrical properties were characterized with various hydrocarbon incorporations. The hydrocarbon incorporation of SiCOH films was estimated using Fourier transform infrared absorption spectra by calculating the peak ratio of hydrocarbon related peaks and Si–O peaks. Thereafter, changes seen in current–voltage ( I–V ) curves were explained by defect states in the interface of films related with the variation of hydrocarbon incorporation by deposition and/or by postdeposition annealing.