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Atomic Layer Deposition of GeO 2 Thin Films on Si(100) using Ge( N , N Ꞌ‐R,R‐en)( NMe 2 ) 2 (Where R = Isopropyl and t ‐Butyl) Precursors
Author(s) -
Jung JaeSun,
Kim DaeHyun,
Shin JinHo,
Kang JunGill
Publication year - 2015
Publication title -
bulletin of the korean chemical society
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.237
H-Index - 59
ISSN - 1229-5949
DOI - 10.1002/bkcs.10400
Subject(s) - atomic layer deposition , deposition (geology) , layer (electronics) , thin film , silicon , chemistry , analytical chemistry (journal) , materials science , crystallography , mineralogy , nanotechnology , metallurgy , environmental chemistry , geology , paleontology , sediment
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