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Polymer peel‐off mask for high‐resolution surface derivatization, neuron placement and guidance
Author(s) -
Martinez Dolores,
Py Christophe,
Denhoff Mike,
Monette Robert,
Comas Tanya,
Krantis Anthony,
Mealing Geoffrey
Publication year - 2013
Publication title -
biotechnology and bioengineering
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.136
H-Index - 189
eISSN - 1097-0290
pISSN - 0006-3592
DOI - 10.1002/bit.24887
Subject(s) - derivatization , silicon dioxide , materials science , polymer , silicon , reactive ion etching , polyimide , dry etching , etching (microfabrication) , lithography , micrometer , surface modification , resolution (logic) , chemical engineering , nanotechnology , optoelectronics , chemistry , chromatography , composite material , mass spectrometry , optics , layer (electronics) , physics , engineering , artificial intelligence , computer science
We present a dry lift‐off method using a chemically resistant spin‐on plastic, polyimide, to pattern surfaces with high accuracy and resolution. Using well‐known lithographic and reactive ion etching techniques, the spin‐on polymer is patterned over a silicon dioxide surface. The plastic efficiently adheres to the silicon dioxide surface during the chemical modification and is readily lifted‐off following the derivatization process, permitting highly reliable surface derivatization. The verticality of the reactive ion etch enables sub‐micrometer features to be patterned, down to 0.8 µm. The technique is used to pattern neurons on silicon dioxide surfaces: efficient neuron placement over a 4 mm area is shown for patterns larger than 50 µm while process guidance is shown for 10 µm patterns. Biotechnol. Bioeng. 2013; 110: 2236–2241. © 2013 Wiley Periodicals, Inc.