Synthesis and luminescence of novel near‐infrared emitting BaZrSi 3 O 9 :Cr 3+ phosphors

The BaZrSi 3 O 9 :Cr 3+ phosphors were prepared by a high temperature solid state method. Their structures were confirmed with XRD and their luminescence properties were investigated. Under excitation at 455 nm, BaZrSi 3 O 9 :Cr 3+ phosphors exhibited a broad near infrared emission band peaked at 800 nm, which was assigned to the 4 T 2 → 4 A 2 transition of Cr 3+ . The near infrared emission intensity reached a maximum at Cr 3+ concentration of 0.7%. There was a concentration quenching phenomenon of Cr 3+ in BaZrSi 3 O 9 matrix and the corresponding concentration quenching mechanism was investigated. With efficient near infrared emission in the range of 700–1000 nm, BaZrSi 3 O 9 :Cr 3+ phosphors may find applications in solar energy conversion.