Synthesis and photoluminescence characteristics of Sm 3 + ‐doped Bi 4 Si 3 O 12 red‐emitting phosphor

A series of novel red‐emitting Sm 3 + ‐doped bismuth silicate phosphors, Bi 4 Si 3 O 12 :xSm 3 + (0.01 ≤  x  ≤ 0.06), were prepared via the sol–gel route. The phase of the synthesized samples calcinated at 800 °C is isostructural with Bi 4 Si 3 O 12 according to X‐ray diffraction results. Under excitation with 405 nm light, some typical peaks of Sm 3 + ions centered at 566, 609, 655 and 715 nm are found in the emission spectra of the Sm 3 + ‐doped Bi 4 Si 3 O 12 phosphors. The strongest peak located at 609 nm is due to 4 G 5 /2 – 6 H 7 /2 transition of Sm 3 + . The luminescence intensity reaches its maximum value when the Sm 3 + ion content is 4 mol%. The results suggest that Bi 4 Si 3 O 12 :Sm 3 + may be a potential red phosphor for white light‐emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd.