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Photoluminescence profiles and fast/slow annealing effects of Eu(III)/Tb(III)‐codoped silica phosphor materials
Author(s) -
Yoon Hee Jung,
Choi Young In,
Kang JunGill,
Sohn Youngku
Publication year - 2016
Publication title -
luminescence
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.428
H-Index - 45
eISSN - 1522-7243
pISSN - 1522-7235
DOI - 10.1002/bio.3029
Subject(s) - photoluminescence , phosphor , annealing (glass) , materials science , luminescence , doping , ion , analytical chemistry (journal) , photoluminescence excitation , excitation , thermal treatment , optoelectronics , chemistry , metallurgy , composite material , physics , chromatography , organic chemistry , quantum mechanics
Abstract A silica (SiO 2 ) nanoparticle matrix was codoped with luminescent Eu(III) and Tb(III) ions using a modified Stöber method. The effects of fast and slow thermal annealing on photoluminescence profile imaging were examined. Slow annealing treatment suppressed more quenching sites than fast thermal annealing to further increase the photoluminescence signals. The photoluminescence signals observed between 450 and 720 nm were assigned to the 5 D 0 → 7 F J (J = 0,1,2,3,4) of Eu(III) and the 5 D 4 → 7 F J (J = 6,5,4,3) transitions of Tb(III). Photoluminescence was largely sensitized by indirect excitation and was much stronger than that generated by direct excitation. The Eu(III) and Tb(III) ions were doped at lower symmetry sites in the silica matrix. Copyright © 2015 John Wiley & Sons, Ltd.