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Spontaneous emission of semiconductor quantum dots in inverse opal SiO 2 photonic crystals at different temperatures
Author(s) -
Yang Peng,
Yang Yingshu,
Wang Yinghui,
Gao Jiechao,
Sui Ning,
Chi Xiaochun,
Zou Lu,
Zhang HanZhuang
Publication year - 2016
Publication title -
luminescence
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.428
H-Index - 45
eISSN - 1522-7243
pISSN - 1522-7235
DOI - 10.1002/bio.3000
Subject(s) - quantum dot , photoluminescence , inverse , materials science , photonic crystal , photonics , optoelectronics , excited state , semiconductor , laser , nanotechnology , optics , physics , quantum mechanics , geometry , mathematics
The photoluminescence (PL) characteristics of CdSe quantum dots (QDs) infiltrated into inverse opal SiO 2 photonic crystals (PCs) are systemically studied. The special porous structure of inverse opal PCs enhanced the thermal exchange rate between the CdSe QDs and their surrounding environment. Finally, inverse opal SiO 2 PCs suppressed the nonlinear PL enhancement of CdSe QDs in PCs excited by a continuum laser and effectively modulated the PL characteristics of CdSe QDs in PCs at high temperatures in comparison with that of CdSe QDs out of PCs. The final results are of benefit in further understanding the role of inverse opal PCs on the PL characteristics of QDs. Copyright © 2015 John Wiley & Sons, Ltd.