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Electrical conduction behavior of organic light‐emitting diodes using fluorinated self‐assembled monolayer with molybdenum oxide‐doped hole transporting layer
Author(s) -
Park SangGeon,
Mori Tatsuo
Publication year - 2015
Publication title -
luminescence
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.428
H-Index - 45
eISSN - 1522-7243
pISSN - 1522-7235
DOI - 10.1002/bio.2753
Subject(s) - monolayer , doping , materials science , molybdenum , oxide , layer (electronics) , diode , optoelectronics , electrical conduction , molybdenum oxide , oled , thermal conduction , inorganic chemistry , nanotechnology , chemistry , composite material , metallurgy
The electrical conductivity behavior of a fluorinated self‐assembled monolayer (FSAM) of a molybdenum oxide (MoOx)‐doped α‐naphthyl diamine derivative (α‐NPD) in organic light‐emitting diodes (OLEDs) was investigated. The current density of the MoOx‐doped α‐NPD/FSAM device was proportional to its voltage owing to smooth carrier injection through the FSAM and the high carrier density of its bulk. The temperature‐dependent characteristics of this device were investigated. The current density–voltage characteristics at different temperatures were almost the same owing to its very low activation energy. The activation energy of the device was estimated to be 1.056 × 10 −2 [eV] and was very low due to the inelastic electron tunneling of FSAM molecules. Copyright © 2014 John Wiley & Sons, Ltd.