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Effect of pressure‐assisted thermal annealing on the optical properties of ZnO thin films
Author(s) -
Berger Danielle,
Kubaski Evaldo Toniolo,
Sequinel Thiago,
Silva Renata Martins,
Tebcherani Sergio Mazurek,
Varela José Arana
Publication year - 2012
Publication title -
luminescence
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.428
H-Index - 45
eISSN - 1522-7243
pISSN - 1522-7235
DOI - 10.1002/bio.2463
Subject(s) - photoluminescence , thin film , materials science , annealing (glass) , spin coating , fourier transform infrared spectroscopy , scanning electron microscope , analytical chemistry (journal) , diffraction , band gap , optoelectronics , ultraviolet , silicon , optics , nanotechnology , chemistry , composite material , physics , chromatography
ZnO thin films were prepared by the polymeric precursor method. The films were deposited on silicon substrates using the spin‐coating technique, and were annealed at 330 °C for 32 h under pressure‐assisted thermal annealing and under ambient pressure. Their structural and optical properties were characterized, and the phases formed were identified by X‐ray diffraction. No secondary phase was detected. The ZnO thin films were also characterized by field‐emission scanning electron microscopy, Fourier transform infrared spectroscopy, photoluminescence and ultraviolet emission intensity measurements. The effect of pressure on these thin films modifies the active defects that cause the recombination of deep level states located inside the band gap that emit yellow–green (575 nm) and orange (645 nm) photoluminescence. Copyright © 2012 John Wiley & Sons, Ltd.