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Single‐Mode Microwave Heating‐Induced Concurrent Out‐of‐Plane Twin Growth Suppression and In‐Plane Epitaxial Growth Promotion of b ‐Oriented MFI Film under Mild Reaction Conditions
Author(s) -
Liu Yi,
Lu Jinming,
Liu Yi
Publication year - 2020
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.202000111
Subject(s) - microwave , epitaxy , materials science , microwave heating , optoelectronics , plane (geometry) , chemical engineering , nanotechnology , layer (electronics) , computer science , telecommunications , geometry , engineering , mathematics
In this study, single‐mode microwave heating was applied in epitaxial growth of b ‐oriented MFI seed monolayer prepared by facile manual assembly, resulting in the formation of well‐intergrown and highly b ‐oriented MFI film with few twins. It exhibited a precise molecular sieving property at a reaction temperature no higher than 100 °C within 2 hours, therefore making it possible for easy operation in an open environment. The capability for concurrent suppression of undesired out‐of‐plane twin growth and promotion of in‐plane epitaxial growth rate under mild reaction conditions was attributed to the obvious superiority of single‐mode microwave heating in comparison with conventional multi‐mode microwave heating in aspects of microwave field uniformity and intensity. Our research indicated that the single‐mode microwave heating technique could potentially be a useful tool for improving the microstructure and therefore the performance of diverse zeolite films.