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1,8‐Substituted Pyrene Derivatives for High‐Performance Organic Field‐Effect Transistors
Author(s) -
Gong Xiaojie,
Zheng Chaoyue,
Feng Xingcui,
Huan Yihong,
Li Jiewei,
Yi Mingdong,
Fu Zhenqian,
Huang Wei,
Gao Deqing
Publication year - 2018
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201801408
Subject(s) - pyrene , field (mathematics) , chemistry , materials science , organic chemistry , mathematics , pure mathematics
There have been many reports on the application of pyrene derivatives as organic semiconductors, but 1,8‐subsituted pyrene semiconductors are less well‐developed. Two p‐type 1,8‐substituted pyrene derivatives were synthesized that were composed of a pyrene core, thiophene or bithiophene arms, and end‐capped octyl chains. These structures were not completely symmetrical and the dihedral angles between the pyrene core and the adjacent thiophene units had a difference of approximately two degrees. The field‐effect performance of these materials was tested on a variety of dielectric surfaces. The performance of both materials with a spin‐coated polystyrene layer on SiO 2 (PS‐treated SiO 2 ) was better than that with an octadecyltrichlorosilane self‐assembled monolayer on SiO 2 (OTS‐treated SiO 2 ), which was mainly attributed to the presence of large grains on the low‐leakage and high‐capacitance PS films. The thiophene‐contained compound presented a hole mobility of up to 0.18 cm 2 V −1 s −1 on PS‐treated SiO 2 , which was 45 times that of the bithiophene‐contained compound, owing to less steric hindrance, high crystallinity, and large grain size.