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Synthesis and Charge‐Transporting Properties of Dibenzothiphene Dioxide‐Based Polysiloxanes
Author(s) -
Liu Yuchao,
Liu Junteng,
Yan Shouke,
Ren Zhongjie
Publication year - 2018
Publication title -
chemistry – an asian journal
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.18
H-Index - 106
eISSN - 1861-471X
pISSN - 1861-4728
DOI - 10.1002/asia.201801099
Subject(s) - electron mobility , carbazole , solubility , materials science , electron , thermal stability , chemical engineering , chemistry , photochemistry , optoelectronics , organic chemistry , physics , quantum mechanics , engineering
We designed and synthesized a dibenzothiphene dioxide‐based homopolysiloxane, PDBTSi, and a carbazole‐dibenzothiophene dioxide alternating copolysiloxane, PCzSi‐ alt ‐PDBTSi, respectively. Both PDBTSi and PCzSi‐ alt ‐PDBTSi possess an improved solubility, good film‐forming ability and extremely high thermal stability due to introduction of polysiloxane main chains. Meanwhile, PDBTSi and PCzSi‐ alt ‐PDBTSi exhibit high triplet energy levels of 2.95 eV and 3.05 eV, respectively. Furthermore, PDBTSi possesses good electron‐transporting property with an electron mobility of 1.02×10 −4 cm 2 V −1 s −1 and a relatively balanced hole mobility of 8.76×10 −5 cm 2 V −1 s −1 . In contrast, PCzSi‐ alt ‐PDBTSi exhibits an electron mobility of 4.65×10 −5 cm 2 V −1 s −1 and a hole mobility of 1.17×10 −4 cm 2 V −1 s −1 . Therefore, our results here provide a feasible strategy to obtain solution‐processed polysiloxane materials with high and balanced electron‐ and hole‐transporting properties.